| PART |
Description |
Maker |
| P11_416 2XP11_200 2XP11_260 P11 2XP11/260 P11/416 |
For capsule devices
|
SEMIKRON[Semikron International]
|
| 2XP17/130 |
For capsule devices
|
Semikron International
|
| P8_375 P8 P8_180 P8/375 |
Heatsink For capsule devices
|
SEMIKRON[Semikron International]
|
| OLD122CP3 OPU850CP OLD122CP3_222CP |
LED Capsule(LED 浼???????))
LED Capsule(瓶帽LED ，特别适合用作图文检测的传感 发光二极管胶囊（瓶帽状的LED，特别适合用作图文检测的传感器）
LED Capsule(LED 传感膜片)) 胶囊的LED（发光二极管传感器（膜片））
From old datasheet system
|
OKI SEMICONDUCTOR CO., LTD.
|
| SKT600/04D |
Capsule Thyristor
|
Semikron
|
| DS9107 |
iButton Capsule
|
Maxim Integrated Products
|
| TRR1A05F00D TRR2AXXX TRR1A05D00D TRR1A05D50D TRR1A |
Miniature, cost-efective switching solution,,state of the art capsule designs
Miniature, cost-efective switching solution,,state of the art capsule designs 微型，成本一效果交换解决方案，最先进的国家胶囊设
PCB Relays
|
List of Unclassifed Man...
Electronic Theatre Controls, Inc.
TTI
ETC[ETC]
List of Unclassifed Manufacturers
List of Unclassifed Manufac...
|
| SHXXC760 |
Capsule Type Rectifier Diode
|
Hind Rectifiers Limited.
|
| N540CH02N540CHXX N540CH16N540CHXX |
Converter Grade Capsule Thyristor
|
Westcode Semiconductors
|
| EPC1 |
Configuration Devices for ACEX, APEX, FLEX & Mercury Devices
|
Altera Corporation
|
| W4NRD0X-0000 W4NRD8C-U000 W4NXD8C-0000 W4NXD8C-L00 |
Diameter: 50.8mm; LCW substrates; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; ultra-low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; standatd mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; low mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; select mircopipe density; silicon carbide substrates. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 76.2mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; LCW type; 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
Diameter: 50.8mm; lsemi-insulating (prototype); 6H-silicon carbide. For high frequency power devices, high power devices, high temperature devices, optoelectronic devices, III-V nitride deposition
|
CREE POWER
|
| NANOSMDM100F |
PolySwitch PTC Devices / Circuit Protection Devices
|
Tyco Electronics
|
|
